Direct Time-Domain View of Auger Recombination in a Semiconductor

Auger Recombination in Semiconductor Quantum Wells

The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterostructures with quantum wells are investigated. It is shown for the first time that there exist three fundamentally different Auger recombination mechanisms of (i) thresholdless, (ii) quasi-threshold, and (iii) threshold types. The rate of the thresholdless Auger process depends on temperature only...

Reduced auger recombination in mid-infrared semiconductor lasers

Time-domain ab initio study of Auger and phonon-assisted auger processes in a semiconductor quantum dot.

We developed time-domain ab initio simulation of Auger phenomena, including multiple exciton generation (MEG) and recombination (MER). It is the first approach describing phonon-assisted processes and early dynamics. MEG starts below the electronic threshold, strongly accelerating with energy. Ligands are particularly important to phonon-assisted MEG, which therefore can be probed with infrared...

Effect of interface roughness on Auger recombination in semiconductor quantum wells

Effect of interface roughness on Auger recombination in semiconductor quantum wells Chee-Keong Tan,1,2,a Wei Sun,1 Jonathan J. Wierer, Jr.,1 and Nelson Tansu1,b 1Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA 2Department of Electrical and Computer Engineering, Clarkson University, Potsdam, New Yo...

Direct Determination of 3D Distribution of Elemental Composition in Single Semiconductor Nanoislands by Scanning Auger Microscopy.

An application of scanning Auger microscopy with ion etching technique and effective compensation of thermal drift of the surface analyzed area is proposed for direct local study of composition distribution in the bulk of single nanoislands. For GexSi1 - x-nanoislands obtained by MBE of Ge on Si-substrate gigantic interdiffusion mixing takes place both in the open and capped nanostructures. Lat...